Part Number Hot Search : 
LC510 78P2241B ASG140 E2000 4T685K0 IRF740 EL305 TBU2502G
Product Description
Full Text Search
 

To Download MMBTA56WT1 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ? semiconductor components industries, llc, 2006 january, 2006 ? rev. 1 1 publication order number: MMBTA56WT1/d MMBTA56WT1 driver transistor pnp silicon features ? moisture sensitivity level: 1 ? esd rating: human body model ? 4 kv machine model ? 400 v ? pb?free package is available maximum ratings rating symbol value unit collector?emitter voltage v ceo ?80 vdc collector? base voltage v cbo ?80 vdc emitter? base voltage v ebo ?4.0 vdc collector current ? continuous i c ?500 madc thermal characteristics characteristic symbol max unit total device dissipation fr?5 board t a = 25 c p d 150 mw thermal resistance, junction to ambient r  ja 833 c/w junction and storage t emperature t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously . if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. device package shipping ? ordering information MMBTA56WT1 sc?70 3000/t ape & ree l collector 3 1 base 2 emitter http://onsemi.com MMBTA56WT1g sc?70 (pb?free) 3000/t ape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification s brochure, brd801 1/d. sc?70 (sot?323) case 419 style 3 marking diagram 3 1 2 fm = device code m = date code*  = pb?free package fm m   1 (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location.
MMBTA56WT1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector? emitter breakdown v oltage (note 1) (i c = ?1.0 madc, i b = 0) v (br)ceo ?80 ? vdc emitter? base breakdown voltage (i e = ?100  adc, i c = 0) v (br)ebo ?4.0 ? vdc collector cutoff current (v ce = ?60 vdc, i b = 0) i ces ? ?0.1  adc collector cutoff current (v cb = ?60 vdc, i e = 0) (v cb = ?80 vdc, i e = 0) i cbo ? ? ? ?0.1  adc on characteristics dc current gain (i c = ?10 madc, v ce = ?1.0 vdc) (i c = ?100 madc, v ce = ?1.0 vdc) h fe 100 100 ? ? ? collector? emitter saturation v oltage (i c = ?100 madc, i b = ?10 madc) v ce(sat) ? ?0.25 vdc base? emitter on voltage (i c = ?100 madc, v ce = ?1.0 vdc) v be(on) ? ?1.2 vdc small?signal characteristics current? gain ? bandwidth product (note 2) (i c = ?100 madc, v ce = ?1.0 vdc, f = 100 mhz) f t 50 ? mhz 1. pulse test: pulse width 300  s, duty cycle 2.0%. 2. f t is defined as the frequency at which |h fe | extrapolates to unity. figure 1. switching time test circuits output turn?on time ?1.0 v v cc +40 v r l * c s  6.0 pf r b 100 100 v in 5.0  f t r = 3.0 ns 0 +10 v 5.0  s output turn?off time +v bb v cc +40 v r l * c s  6.0 pf r b 100 100 v in 5.0  f t r = 3.0 ns 5.0  s *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all v oltage polarities
MMBTA56WT1 http://onsemi.com 3 figure 2. current?gain ? bandwidth product figure 3. capacitance figure 4. switching time i c , collector current (ma) ?100 ?200 ?10 200 100 70 50 20 v r , reverse voltage (volts) ?1.0 ?100 ?0.1 100 70 50 30 20 10 ?2.0 v ce = ?2.0 v t j = 25 c f t , current?gain ? bandwidth product (mh z c, capacitance (pf) ?2.0 ?3.0 ?5.0 ?7.0 ?20 ?30 ?50 ?70 30 7.0 5.0 ?0.2 ?0.5 ?5.0 ?10 ?20 ?50 t j = 25 c c ibo c obo i c , collector current (ma) ?10 ?5.0 500 200 100 50 20 10 ?100 t, time (ns) ?50 ?200 ?500 1.0 k 300 700 70 30 ?7.0 ?300 ?70 ?20 ?30 v cc = ?40 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f t r t d @ v be(off) = ?0.5 v figure 5. active?region safe operating area v ce , collector?emitter voltage (volts) ?10 ?50 ?1.0 ?500 ?200 ?100 ?50 ?20 ?10 ?20 ?2.0 ?5.0 ?1.0 k i c , collector current (ma) 1.0 ms 1.0 s t a = 25 c current limit thermal limit second breakdown limit 100  s t c = 25 c ?3.0 ?7.0 ?30 ?100 ?70 ?30 ?70 ?300 ?700 figure 6. dc current gain ?2.0 ?500 ?0.5 i c , collector current (ma) 400 200 100 80 60 40 ?10 , dc current gain t j = 125 c ?1.0 ?5.0 v ce = ?1.0 v ?20 ?100 ?50 ?200 h fe 25 c ?55 c figure 7. ?on? voltages v, voltage (volts) ?10 ?500 ?1.0 i c , collector current (ma) ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 0 ?100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = ?1.0 v ?0.5 ?2.0 ?5.0 ?200 ?20 ?50
MMBTA56WT1 http://onsemi.com 4 figure 8. collector saturation region figure 9. base?emitter temperature coefficient i c , collector current (ma) i b , base current (ma) r vb , temperature coefficient (mv/ c)  , collector?emitter voltage (volts ) v ce ?100 ?500 ?0.5 ?0.8 ?1.2 ?1.6 ?2.0 ?2.4 ?2.8 ?10 r  vb for v be ?1.0 ?2.0 ?5.0 ?20 ?50 ?200 ?0.1 ?10 ?0.05 ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 0 ?1.0 t j = 25 c ?50 i c = ?100 ma i c = ?50 ma i c = ?250 ma i c = ?500 ma i c = ?10 ma ?20 ?2.0 ?5.0 ?0.2 ?0.5
MMBTA56WT1 http://onsemi.com 5 package dimensions sc?70 (sot?323) case 419?04 issue m style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028  mm inches  scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different a pplications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical e xperts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc prod uct could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was neglig ent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MMBTA56WT1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.


▲Up To Search▲   

 
Price & Availability of MMBTA56WT1

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X